| PART |
Description |
Maker |
| IS41C16128-35T IS41C16128-35TI IS41C16128-35K IS41 |
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 35 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 40 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 45 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 50 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 60 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| CY7C109D-10VXI |
1-Mbit (128K x 8) Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| CY7C1338G |
4-Mbit (128K x 32) Flow-Through Sync SRAM(4-Mb (128K x 32)流通式同步SRAM)
|
Cypress Semiconductor Corp.
|
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| CY14B101LA-SP45XI CY14B101LA-SP45XIT CY14B101LA-BA |
1 Mbit (128K x 8/64K x 16) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SSOP 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48
|
Cypress Semiconductor, Corp.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M68AW128ML55ND6F M68AW128ML70ZB6T M68AW128M M68AW1 |
128K X 16 STANDARD SRAM, 70 ns, PDSO44
2兆位28K的16.0V异步SRAM
BACKSHELL
2 Mbit (128K x16) 3.0V Asynchronous SRAM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
